Title of article :
Preparation of SiOxNy films by reactive KrF laser ablation
Author/Authors :
Kazunori Maruyama، نويسنده , , Yasushi Aoki، نويسنده , , Masunori Matsumoto، نويسنده , , Yasushi Hiroshima، نويسنده , , Hiroshi Ohta، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
5
From page :
764
To page :
768
Abstract :
Various SiOxNy films were prepared from Si3N4 target by reactive KrF laser ablation under various oxygen pressures (10−7 ∼ 10−2 Torr). Oxygen content in these films increased and nitrogen content decreased with increasing oxygen pressure. A composite film piled with various SiOxNy layers was prepared by KrF laser irradiation onto Si3N4 target for 2.5 min with increasing oxygen pressure stepwise gradually from 10−7 to 10−2 Torr.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990672
Link To Document :
بازگشت