High depth resolution depth profiling of metal films using SIMS and sample rotation

SIMS depth profiles are presented from a three level metallisation system on silicon with and without sample rotation demonstrating the improvements in interface resolution that can be obtained with sample rotation. The ability to perform the analyses on selected areas of the sample surface is demonstrated. Using model samples consisting of a single level metal system deposited on plain wafer substrates, the efficacy of wet and dry (plasma) cleaning processes in reducing the level of interfacial sulphur contamination is demonstrated by using SIMS analysis with sample rotation. The wet cleaning process is shown to be more effective than the dry process.