Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere

We investigated the native oxidation of ion-implanted Si(100) surfaces in anticipation of a future necessity for controlling native oxidation during semiconductor device fabrication. Quantitative analysis of XPS spectra was used to estimate SiO2 and SiOx thicknesses. Native oxidation of Si(100) wafers in which were implanted with As, P, B or Si was examined. The results show that oxidation of As or P-implanted Si is much faster than that of Si without implantation, however, no conclusive difference was found between the oxidation rates of B or Si-implanted Si and that of Si without implantation. These results indicate that native oxidation is influenced mainly by the species of implanted ions. Neither ion-implantation induced defects nor surface roughness was found to have major effect on the native oxidation rate.