Title of article :
Charging phenomenon of insulators in negative-ion implantation
Author/Authors :
Yoshitaka Toyota، نويسنده , , Hiroshi Tsuji، نويسنده , , Shoji Nagumo، نويسنده , , Yasuhito Gotoh، نويسنده , , Junzo Ishikawa، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
5
From page :
360
To page :
364
Abstract :
The energy distribution of secondary electrons emitted from an insulator during negative-ion implantation was measured. According to secondary-electron-energy analysis, the charging voltage of insulator was estimated from the measured energy distribution. The experimental results in negative-carbon-ion implantation showed that the charging voltages of a quartz glass plate and a photoresist film on silicon substrate are several negative volts in the energy range from 5 to 35 keV and decrease gradually with increasing ion energy. The low negative charging voltage of insulator and the most probable energy of the secondary-electron energy distribution during negative-ion implantation are discussed using a charging model based on an electric double layer.
Journal title :
Applied Surface Science
Serial Year :
1996
Journal title :
Applied Surface Science
Record number :
990819
Link To Document :
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