Decomposition of triethylindium (TEI) on GaP(001) surface studied by TPD, XPS and RHEED

Decomposition of triethylindium (TEI) on a GaP(001) surface with and without hydrogen gas ambience has been studied using temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS) and reflection high-energy electron diffraction (RHEED). We find TPD peaks of ethylene at about 110 and 330°C and those of hydrogen at 110, 220 and 330°C. Desorption products are not changed with and without hydrogen gas ambience. The intensity ratio of the ethylene peak at about 330 to that at 110°C increases with hydrogen gas ambience. The mechanism of decomposition of TEI on the GaP(001) surface is discussed.