Si epitaxial growth at low temperatures using remote plasma process

We are successful in growing Si epitaxial layer below 200°C using remote plasma process. A plasma tube with concentric arrangement was accepted: argon and/or hydrogen plasma excited with rf power were supplied through the outer glass tube, and disilane source gas was introduced through the inner stainless tube. Just before depositing the film, surface cleaning with hydrogen plasma is inevitable. The dependence on the substrate temperature, rf power and gas flow rate has been investigated, giving the experimental conditions suitable for the epitaxial growth.