Comparison of MOCVD and MBE semiconductor superlattices for the evaluation of depth resolution in AES and SIMS

TheGaAs/AlAs semiconductor superlattices of six periods structure are prepared by MOCVD and MBE, and evaluated as a reference material for the discussion of depth resolution. The determination of the thickness for individual layer and the confirmation of flatness in the interfaces are carried out by the TEM observation. The sample of alternating layers of 10 nm thickness each, is applied to the evaluation of depth resolution in sputter assisted AES, and samples of 50 and 200 nm thickness to SIMS. After the optimization of analytical conditions in AES and SIMS, depth profile analyses are achieved and the depth resolution is calculated in individual interfaces. No significant difference in the values for depth resolution are found between MOCVD and MBE samples. Depth resolution seems to be almost constant, as the depth increases from the topmost surface.