Author/Authors :
T. Jikimoto، نويسنده , , Michael C. Heck، نويسنده , , K. Komoku، نويسنده , , M. Hirai، نويسنده , , M. Kusaka، نويسنده , , M. Iwami and M. Yanagihara، نويسنده ,
Abstract :
The initial stage of Co(film)-Si(substrate) contact formation was studied at room temperature by photoemission spectroscopy (PES) using synchrotron radiation (SR) and low energy electron diffraction (LEED). The results allow us to conclude that the deposited Co atoms interact chemically with Si atoms from the beginning of Co deposition on the Si substrate and the same Co-Si reacted product forms onSi(100)2 × 1 surface atθ(Co) ≤ 3.
