Author/Authors :
H. Shinoda، نويسنده , , M. Kosaka، نويسنده , , J. Kojima، نويسنده , , H. Ikeda، نويسنده , , S. Zaima، نويسنده , , H. Y. Yasuda، نويسنده ,
Abstract :
The electrical properties of Zr/ and Ti/Si1−xGex/(100)Si heterostructures have been examined. The Schottky barrier heights (SBHʹs) of as-deposited diodes determined fromI-V characteristics are 0.53 and 0.55 eV for Zn/ and Ti/n-Si0.8Ge0.2, respectively. It can be seen that p-Si0.8Ge0.2 diodes tend to have smaller SBHʹs than n-Si0.8Ge0.2 ones for both metals. This fact is consistent with the contact resistivity measured for Zr/n+- and Zr/p+-Si0.8Ge0.2/(100)Si.
