Gas source molecular beam epitaxy of β-SiC on Si substrates

The growth of β-SiC films on Si(100) substrates using C2H2 gas and Si solid sources in a molecular beam epitaxy system has been investigated. Different C2H2 and Si fluxes as well as different substrate temperatures have been used. The growth was performed at two steps: the initial optimal carbonisation step followed by the MBE growth with simultaneous supply of Si molecular and C2H2 gas beams. The films were analysed using reflected high-energy electron diffraction, scanning electron microscopy, transmission electron microscopy, atomic force microscopy and Fourier transform infrared spectroscopy. Thin (< 0.1 μm) single crystalline SiC was grown at 980°C while 850°C was sufficient for the carbonisation of the Si surface. Films thicker than 0.1 μm are partially polycrystalline.