An infrared study of Ge+ implanted SiC

The damage produced by 200 keV Ge+ ion implantation in 6H-SiC (from Cree Research) has been studied by fast Fourier transform infrared (IR) reflectance spectroscopy. A new, recently developed at the spectroscopy laboratory of AUTh, non-destructive optical method, based on the normalized atomic vibrational damping of the ‘reststrahlen band’, has been applied to determine damage depth profiles of SiC for damage over three orders of magnitude, up to amorphisation. For the amorphized state IR results show an up to 30% reduction of heteronuclear SiC bonds. No new broad SiSi or CC vibrational bands were observed.