Author/Authors :
S. Salvatori، نويسنده , , R. Vincenzoni، نويسنده , , M.C. Rossi، نويسنده , , F. Galluzzi، نويسنده , , F. Pinzari، نويسنده , , G. Mattei، نويسنده , , E. Cappelli، نويسنده , , P. Ascarelli، نويسنده ,
Abstract :
Electronic properties of diamond films grown on silicon by hot-filament CVD have been investigated. Results of electrical measurements with different geometries, in the dark and under illumination, are related to diamond film structure through simple transport models.
