Title of article
A manufacturable poly-emitter graded-SiGe HBT technology for wireless and mixed-signal applications
Author/Authors
D. Nguyen-Ngoc، نويسنده , , D.A. Sunderland، نويسنده , , D.C. Ahlgren، نويسنده , , S.J. Jeng، نويسنده , , M.M. Gilbert، نويسنده , , J.C. Malinowski، نويسنده , , K.T. Schonenberg، نويسنده , , K.S. Stein، نويسنده , , B.S. Meyerson، نويسنده , , D.L. Harame، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
8
From page
194
To page
201
Abstract
Graded SiGe-base heterojunction transistors (HBTs) offer the advantages of bandgap engineering while maintaining the cost and manufacturing benefits of the silicon industry. For a technology to be widely used in the mixed signal applications arena it must offer more than just the HBT: it must have a complete set of passive elements and interconnects suitable for the rf design environment. This paper describes the development and current status of IBMʹs advanced SiGe HBT technology installed on a 200 mm CMOS/DRAM line. It reviews basic principles of HBT operation, discusses the aspects of the ultra high vacuum chemical vapor deposition (UHV/CVD) growth technique, describes the overall SiGe HBT process, the performance of the HBTs and support devices, and the circuit results achieved to data.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990918
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