• Title of article

    On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells

  • Author/Authors

    Barry R. Manor، نويسنده , , O. Brafman، نويسنده , , J.C. Bean، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    4
  • From page
    217
  • To page
    220
  • Abstract
    A Raman scattering study of Ge/Si sextuple quantum wells with fully strained 5 ML Ge wells shows remarkable differences in the confinement of the LO GeGe phonon and the smoothness of the interface as the thickness of Si layers is varied.
  • Journal title
    Applied Surface Science
  • Serial Year
    1996
  • Journal title
    Applied Surface Science
  • Record number

    990922

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=990922