Abstract :
High speed p MOS devices are now in prospect which take advantage of strain induced modifications of band structure in Si1−xGex layers with 0 ≤ x ≤ 1. This paper reviews our current knowledge of the electrical properties of the 2D hole gas in SiGe materials which is needed in order to assess device potential. Hall effect, Shubnikov-de Haas and cyclotron resonance data on fully pseudomorphic Si/SiGe/Si structures and on Si1−xGex layers grown on strain tuning Si1−xGey ‘virtual substrates’ are presented. The roles of alloy disorder, interface charge, interface roughness and phonon scattering are discussed. Finally, we comment on current and possible future device performance in the light of experimental and theoretical results.
