Uniaxial stress effects on a Si/Si1−xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy

Magnetotunnelling spectroscopy combined with the application of uniaxial stress has been performed on a p-type SiSi1−xGex double barrier resonant tunnelling structure. Large effects of the strain are seen both in the intensity of the resonances, in the position of the resonance voltages, and on the curvature of the hole-subband dispersions. The change in intensity is indicative of the bandmixing taking place in the barriers. The observed voltage shifts cannot be explained by a simple four-band model for an isolated quantum well.