Operation of SiGe channel heterojunction p-MOSFET

We report a Monte Carlo analysis of SiGe p-MOSFET in comparison with conventionally designed Si p-MOSFET. The purpose of our study is to quantify the contribution in device performance enhancement of the separation of holes from rough Si/SiO2 interface and of the SiGe transport properties. In SiGe p-MOSFET, the effective channel mobility is increased by a factor 2.6 with 60% of this improvement due to the confining of holes in a potential well. The device performances ID, gm, and fT are improved by at least 55% only due to the strain-induced lowering of the hole effective mass in SiGe.