Author/Authors :
M. Jaumann، نويسنده , , J. Stimmer، نويسنده , , P. Schittenhelm، نويسنده , , J.F. Nützel، نويسنده , , G. Abstreiter، نويسنده , , E. Neufeld ، نويسنده , , B. Holl?nder، نويسنده , , Ch. Buchal، نويسنده ,
Abstract :
We investigated the room temperature electroluminescence of Er doped silicon diodes codoped with O or F as a function of dopant concentration and annealing conditions. Samples with Er concentrations of 5 × 1017 cm−3 and 1018 cm−3 show the most intense luminescence at λ = 1.54 μm. In case of F codoping the Er3+ peak intensity at 300 K is weak and there is a strong defect related peak at about the same wavelength.
