Author/Authors :
J.M. Berroir، نويسنده , , S. Zanier، نويسنده , , Y. Guldner، نويسنده , , J.P. Vieren، نويسنده , , I. Sagnes، نويسنده , , Y. Campidelli ، نويسنده , , P.A. Badoz، نويسنده ,
Abstract :
Infrared absorption has been investigated in high quality p-type SiGe/Si multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analysed using calculations of the intersubband absorption coefficient in the envelope function formalism and a Drude model to account for the free carrier effects. Their dependence with polarization, doping level and Ge content are presented.
