Title of article
Infrared spectroscopy in p-type SiGe/Si quantum wells
Author/Authors
J.M. Berroir، نويسنده , , S. Zanier، نويسنده , , Y. Guldner، نويسنده , , J.P. Vieren، نويسنده , , I. Sagnes، نويسنده , , Y. Campidelli ، نويسنده , , P.A. Badoz، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
331
To page
335
Abstract
Infrared absorption has been investigated in high quality p-type SiGe/Si multiple quantum wells grown by UHV-CVD. Both intersubband and free carrier absorptions have been quantitatively analysed using calculations of the intersubband absorption coefficient in the envelope function formalism and a Drude model to account for the free carrier effects. Their dependence with polarization, doping level and Ge content are presented.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990944
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