Recent progress of heterostructure technologies for novel silicon devices

The recent progress in Si heterostructure technologies is reviewed from physical and engineering viewpoints. Advanced methods to fabricate ultrashallow p-n junctions and high quality heterojunctions (SiGe/Si, μc-Si/SiC/Si) are developed to make a breakthrough in pushing back the limitation of Si-ULSI. Band engineering technology based on superstructures is also established by developing atomic hydrogen assisted molecular beam epitaxy. This opens up new expectations for Si-based optoelectronic integrated circuits. In addition, self-organized processing for nano-structure fabrication is being developed to realize new-concept quantum functional devices.