Electroluminescent porous silicon p-n junction using polycrystalline silicon films

Electroluminescent devices have been achieved by anodization of a n+-type polycrystalline Si film deposited on p-type substrate. Al and AuPd pads were used to form the electrical contact on the porous n+-p junction. The current-voltage characteristics of the structures are significantly dependent on the type of metallic contact. Electroluminescence of the devices is also investigated.