Author/Authors :
S. Gardelis، نويسنده , , U. Bangert، نويسنده , , B. Hamilton، نويسنده , , R.F. Pettifer، نويسنده , , DA Hill، نويسنده , , R. Keyse، نويسنده , , D. Teehan، نويسنده ,
Abstract :
In this study we have used high resolution parallel electron energy loss spectroscopy (PEELS) and X-ray excited optical luminescence (XEOL) to investigate the chemical nature of the luminescence centre in fresh and aged porous silicon. We find that regardless of the non-stoichiometric oxides which were observed by PEELS in our fresh porous silicon layers, SiSi bonded material is involved in the luminescence process. However, in the case of aged porous silicon both SiSi and SiO bonded material are involved.