Title of article
Self limiting growth on nominally oriented (111)A GaAs substrates in atomic layer epitaxy
Author/Authors
Jeong-Sik Lee، نويسنده , , Sohachi Iwai، نويسنده , , Hideo Isshiki، نويسنده , , Takashi Meguro، نويسنده , , Takuo Sugano، نويسنده , , Yoshinobu Aoyagi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
275
To page
278
Abstract
Layer-by-layer growth on nominally oriented (111)A GaAs substrate has been performed by atomic layer epitaxy (ALE). Under enough AsH3 feeding, the growth rate saturation of one-fourth monolayer per cycle was observed at the Tg range between 560°C and 600°C and three-eighths of monolayer per cycle at the Tg range below 550°C on (111)A substrate. The drastic change of the growth rate saturation at around 550°C indicates some kinds of surface reconstructions or site occupation on (111)A surface during AsH3 supply.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
990996
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