Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation

In order to characterize the isolated defect clusters in Si crystal induced by single ion implantation (SII), a quantitative analysis of forward I-V characteristics of ion irradiated Schottky diodes was performed. A very good linearity was found between the number of single ions and the number of recombination centers. By a careful choice of SII condition, in order to get a linear response of a device function to the single ion dose, this quantitative analysis could be applied to the test of device immunity against ion irradiation and to the diagnosis of the process integrity.