Author/Authors :
Hiroshi Nohira، نويسنده , , Hiroaki Sekikawa، نويسنده , , Masanori Matsuda، نويسنده , , Takeo Hattori، نويسنده ,
Abstract :
The effects of chemical preoxidation treatments on the oxidation reaction at SiO2Si(111) interfaces were investigated using XPS. In the case of preoxidation treatment in a mixed solution of H2SO4 and H2O2 the layer-by-layer oxidation reaction occurs at the interface as in the case of the preoxidation treatment in dry oxygen at 300°C. The effect of chemical preoxidation treatment in a hot solution of HNO3 and that in a mixed solution of HCl and H2O2 on the oxidation reaction at the interface were also investigated.
