Title of article
Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe
Author/Authors
M. Koh، نويسنده , , K. Horita، نويسنده , , B. Shigeta، نويسنده , , T. Matsukawa، نويسنده , , A. KISHIDA‡، نويسنده , , T. Tanii، نويسنده , , S. Mori، نويسنده , , I. Ohdomari، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
364
To page
368
Abstract
Radiation effects induced by MeV He single ions in pMOSFETs and nMOSFETs in commercially available CMOS4007 have been studied extensively. The key results from this study are: (1) pMOSFETs are more fragile than nMOSFETs in terms of threshold voltage shift, (2) nMOSFETs are more susceptible than pMOSFETs to the degradation of subthreshold swing. The different features in the radiation effects have been discussed comprehensively.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991084
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