Studies on low temperature silicon grain growth on SiO2 by electron cyclotron resonance chemical vapor deposition

Electron cyclotron resonance chemical vapor deposition has resulted in poly-Si films with grains of one micron dimension by using the hydrogen dilution method. The crystalline fraction of the poly-Si film is almost 100% as determined from analysis of Raman spectra. The poly-Si films have preferred 〈111〉 and 〈110〉 orientations according to their XRD spectra. The hydrogen content of the poly-Si films is less than 0.8%. A simple model of grain formation is proposed to explain grain growth in the electron cyclotron resonance chemical vapor deposition deposited poly-Si films.