Title of article
Nitridation of GaAs surfaces stimulated by nitrogen glow discharge
Author/Authors
Q.J. Xu، نويسنده , , X.M. Ding، نويسنده , , X.Y. Hou، نويسنده , , Xun Wang، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
468
To page
471
Abstract
Nitridation of a GaAs surface can be realized simply by exposing the substrate to a windowless-connected nitrogen glow discharge light source. The photoemission data measured in situ show that both GaN and AsN species have been formed during the exposure process. In addition, it is found that nitridation can result in a 0.3 eV reduction of surface band bending.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991100
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