Author/Authors :
A. Giardini، نويسنده , , Joseph M. Ambrico، نويسنده , , D. Smaldone، نويسنده , , John R. Martino، نويسنده , , G.P. Parisi، نويسنده , , V. Capozzi، نويسنده , , G. Perna، نويسنده ,
Abstract :
The laser ablation technique has been successfully used in our laboratory for the deposition of CdSe and CdTeCdSe multilayers on Si(100) and Si(111) substrates. X-ray analysis showed that CdSeSi(111) and CdSeSi(100) films were grown in the hexagonal phase. Their orientation changed from (100) to (002) by only varying the substrate temperature from 200°C to 400°C. The same hexagonal growth was obtained in multilayers of CdSe and CdTe on Si(111). Photoluminescence spectra of CdSe films were studied as a function of the excitonic features and results on the extrinsic luminescence are reported.
