Laser ablation of highly oriented CdSe thin films and CdSeCdTe multilayers on silicon substrates

The laser ablation technique has been successfully used in our laboratory for the deposition of CdSe and CdTeCdSe multilayers on Si(100) and Si(111) substrates. X-ray analysis showed that CdSeSi(111) and CdSeSi(100) films were grown in the hexagonal phase. Their orientation changed from (100) to (002) by only varying the substrate temperature from 200°C to 400°C. The same hexagonal growth was obtained in multilayers of CdSe and CdTe on Si(111). Photoluminescence spectra of CdSe films were studied as a function of the excitonic features and results on the extrinsic luminescence are reported.