Author/Authors :
G. de Cesare *، نويسنده , , S. La Monica، نويسنده , , G. Maiello، نويسنده , , G. Masini، نويسنده , , E. Proverbio and A. Risitano، نويسنده , , A. Ferrari، نويسنده , , N. Chitica، نويسنده , , M. Dinescu، نويسنده , , R. Alexandrescu، نويسنده , , I. Morjan، نويسنده , , E. Rotiu، نويسنده ,
Abstract :
Pulsed laser irradiation at low incident fluences was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon carbide (a-SiC:H) films deposited on Si wafers. The amorphous films, with a carbon content in the range 30–50%, were deposited on (100) Si wafers by low temperature plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a multipulse KrF excimer laser. The crystallinity modifications induced by the laser treatment were evidenced by Fourier transform infrared (FTIR) spectroscopy and X-ray diffraction. An important increase of the microhardness was evidenced as an effect of the laser treatment.
