Author/Authors :
Koji Miyake، نويسنده , , Kenj Hata، نويسنده , , Hidemi Shigekawa، نويسنده , , Ryozo Yoshizaki، نويسنده , , Takeru Abe، نويسنده , , Takehiro Ozawa، نويسنده , , Toshihiko Nagamura، نويسنده ,
Abstract :
With irradiation of HBO2 molecules onto the Si(111)-7 × 7 surface at ∼750°C, the √3 × √3 structure, where B atoms occupy the T4 sites, was formed as predicted from previous electron diffraction measurements. In the initial stage, HBO2 molecules were found to react with the unfolded half-units of the Si(111)-7 × 7 surface. When the √3 × √3 structure was heated at ∼900°C for 5 s, another √3 × √3 structure was formed. Upon comparison between the two structures, the high-temperature phase was attributed to the structure where B atoms occupy the S5 sites.
