A model for the temperature-dependent adsorption kinetics of SiH4 on Si(100)

Silane adsorption kinetics on Si(100) at elevated temperatures has been investigated from the gas-source MBE growth rate and hydrogen coverage of the grown surface at T=450–850°C. Silane adsorption most probably changes its mode near 600°C, from two-site adsorption below this temperature to four-site adsorption as the adsorption temperature is increased. A unified interpretation is given for this temperature-dependent behavior of silane adsorption, from the possible presence of a SiH3 adsorption precursor and its thermally activated desorption from the surface.