مرکز منطقه ای اطلاع رساني علوم و فناوري - Ideal monolayer adsorption of germanium on Si(100) surface

Title of article :

Ideal monolayer adsorption of germanium on Si(100) surface

Author/Authors :

Satoshi Sugahara، نويسنده , , Takuya Kitamura، نويسنده , , Sigeru Imai، نويسنده , , Yasutaka Uchida، نويسنده , , Masakiyo Matsumura، نويسنده ,

Issue Information :

روزنامه با شماره پیاپی سال 1996

Pages :

From page :

137

To page :

144

Abstract :

Self-limiting monolayer adsorption of Ge has been demonstrated on Si(100) at 520°C using dimethylgermane as a self-limiting molecular precursor. This opens a way for hetero-ALE of Ge on the Si surface.

Journal title :

Applied Surface Science

Serial Year :

1996

Journal title :

Applied Surface Science

Record number :

991241

Link To Document :

https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=991241