• Title of article

    Modeling of silicon atomic-layer-epitaxy

  • Author/Authors

    Satoshi Sugahara، نويسنده , , Eiji Hasunuma، نويسنده , , Sigeru Imai، نويسنده , , Masakiyo Matsumura، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1996
  • Pages
    11
  • From page
    161
  • To page
    171
  • Abstract
    A kinetic model has been presented for atomic layer epitaxy of Si using cyclic exposures of SiH2Cl2 and atomic hydrogen. This model is based on the surface reaction of adsorbates formed by gas-phase reaction of SiH2Cl2. The ideal growth rate of one monolayer per cycle is achieved only when the dominant precursor is SiHCl. Limiting factors of the ALE window are also discussed.
  • Journal title
    Applied Surface Science
  • Serial Year
    1996
  • Journal title
    Applied Surface Science
  • Record number

    991244

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=991244