Title of article
In-plane photoconductivity of InAs/GaAs strained-layer structures prepared on variously oriented GaAs substrates
Author/Authors
Takayuki Shima، نويسنده , , Eiichi Yamamoto، نويسنده , , Shigekazu Kuniyoshi، نويسنده , , Kazuhiro Kudo، نويسنده , , Kuniaki Tanaka، نويسنده , , Shinji Kimura، نويسنده , , Akira Obara، نويسنده , , Yunosuke Makita، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
5
From page
233
To page
237
Abstract
Photoconductivity (PC) measurements were employed to investigate the photoelectric properties of InAs/GaAs strained-layer structure grown on GaAs (100), (311)A and (111)A substrates. PC results of the sample grown on GaAs (311)A and (111)A substrates showed specific PC signals at lower energy region (around 1.2 eV) from GaAs band-edge. From transient PC measurement varying the sample temperature, activation energies of around 0.19 eV were obtained for the sample grown on (311)A substrate with 1 monolayer of InAs. These activation energies suggest the existence of relatively thick InAs region that are locally formed and/or specific defects formed in thesamples grown on highly oriented substrates.
Journal title
Applied Surface Science
Serial Year
1996
Journal title
Applied Surface Science
Record number
991255
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