Author/Authors :
A. De Benedittis، نويسنده , , A Di Cristoforo، نويسنده , , G Majni، نويسنده , , P Mengucci، نويسنده , , B.E Watts، نويسنده , , Fabrizio Leccabue، نويسنده , , E Vasco، نويسنده , , A Diodati، نويسنده ,
Abstract :
A systematic study of the phase distribution in PbZr0.52Ti0.48O3 films deposited, using a XeCl excimer laser, on two electrodes Si/RuO2 and Si/Ti/RuO2 has been carried out. In order to refine the growth parameters, the substrate temperature was changed in the range 600–700°C at two different values of the laser fluence, 3 and 6 J/cm2. The deposited films were characterized by grazing angle X-ray diffraction (GAD), scanning (SEM) and transmission (TEM) electron microscopy, energy dispersive spectroscopy (EDS) and measurements of the hysteresis loop by a modified Sawyer–Tower circuit. Results showed that at high fluence the perovskite phase decreases as the substrate temperature increases and that the Ti favours the nucleation of the perovskite.
