Study of dielectric properties of laser processed BaTiO3 thin films on Si(100) with TiN buffer layer

High quality BaTiO3 thin films on Si(100) substrates with TiN buffer layer were fabricated successfully by using pulsed laser deposition (PLD) technique. The high chemical stability and diffusion barrier properties of TiN were expected to prevent a reaction and interdiffusion between the BaTiO3 and Si(100). A KrF excimer laser (λ=248 nm) was used to ablate both the TiN and BaTiO3 targets. The depositions were carried out both in high vacuum (≤10−6 Torr) and oxygen ambient at different temperatures. The film deposited at 600°C under 100 mTorr oxygen atmosphere showed lower dielectric losses of 0.3% and DC leakage current of 0.06 μA than those deposited under high vacuum. Dielectric properties studies indicated a dielectric constant of 223 at capacitance density of 56 nF/mm2.