Preparation of TiNi ferroelastic–ferroelectric thin film heterostructures

Active and adaptive thin film materials for `smartʹ materials will likely be a heterostructure of several types of applications. In this investigation, TiNi shape memory thin films on Si(100) substrates with BaTiO3 and PbZr1−xTixO3 (PZT) as buffer layer were deposited by the pulsed laser deposition method. The critical issues of deposition and processing of shape memory ferroelastic and ferroelectric materials have been addressed to fabricate the thin film sensor–actuator heterostructures. Characterization of the films has been done by using X-ray diffractometer and atomic force microscope techniques. The buffer layer of BaTiO3 and PZT have been beneficial to grow crystalline quality TiNi films on Si(100) substrates.