Author/Authors :
H Yamaguchi، نويسنده , , J.G Belk، نويسنده , , XM Zhang، نويسنده , , J.L. Sudijono، نويسنده , , M.R Fahy، نويسنده , , T.S. Jones، نويسنده , , B.A. Joyce، نويسنده ,
Abstract :
The results from reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM) observations of the growth process of InAs on GaAs (111)A substrates during solid source molecular beam epitaxy are presented. In contrast to the 3D growth mode observed for InAs deposition on GaAs (001), there is no evidence for 3D island formation on the (111)A surface. The precise control of 2D growth of InAs layers makes it possible to probe the early stages of strain relaxation by imaging misfit dislocations on the atomic scale by STM.
