Atomic-layer chemical-vapor-deposition of silicon-nitride

Silicon-nitride films have been successfully deposited in a layer-by-layer manner by alternating exposures to dichloro-silane and hydrazine. The saturated deposition rate was about 2.3 Å/cycle, very near to 1 monolayer/cycle, in a temperature range between 525°C and 650°C. The layer-by-layer manner deposition was confirmed to start from a very early stage of its deposition cycle. Deposited film characteristics including electron tunnelling are also presented.