Title of article
Atomic-layer chemical-vapor-deposition of silicon-nitride
Author/Authors
Shunsuke Morishita، نويسنده , , Satoshi Sugahara، نويسنده , , Masakiyo Matsumura، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
7
From page
198
To page
204
Abstract
Silicon-nitride films have been successfully deposited in a layer-by-layer manner by alternating exposures to dichloro-silane and hydrazine. The saturated deposition rate was about 2.3 Å/cycle, very near to 1 monolayer/cycle, in a temperature range between 525°C and 650°C. The layer-by-layer manner deposition was confirmed to start from a very early stage of its deposition cycle. Deposited film characteristics including electron tunnelling are also presented.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991523
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