Title of article
Aluminum nitride thin films grown by plasma-assisted pulsed laser deposition
Author/Authors
Tetsuya Ogawa، نويسنده , , Mitsuo Okamoto، نويسنده , , Yusuke Mori، نويسنده , , Takatomo Sasaki، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
57
To page
60
Abstract
Oriented (0002) AlN thin films have been grown on Si(100) substrate by plasma-assisted pulsed laser deposition technique from sintering AlN target. The full width at half maximum (FWHM) value of (0002) X-ray diffraction peak was 0.60° in the 2θθ scan mode for AlN films grown in nitrogen plasma ambient at 800°C. Cathodoluminescence study revealed the effect of growth environments on optical property of AlN films.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991545
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