Author/Authors :
Tetsuya Ogawa، نويسنده , , Mitsuo Okamoto، نويسنده , , Yusuke Mori، نويسنده , , Takatomo Sasaki، نويسنده ,
Abstract :
Oriented (0002) AlN thin films have been grown on Si(100) substrate by plasma-assisted pulsed laser deposition technique from sintering AlN target. The full width at half maximum (FWHM) value of (0002) X-ray diffraction peak was 0.60° in the 2θθ scan mode for AlN films grown in nitrogen plasma ambient at 800°C. Cathodoluminescence study revealed the effect of growth environments on optical property of AlN films.
