Title of article
Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor
Author/Authors
F. Matsukura، نويسنده , , A. Oiwa، نويسنده , , Gilbert G. Walter and Xiaoping A. Shen، نويسنده , , Y. Sugawara، نويسنده , , N. Akiba، نويسنده , , T. Kuroiwa، نويسنده , , H. Ohno، نويسنده , , A. Endo، نويسنده , , S. Katsumoto، نويسنده , , Y. Iye، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
178
To page
182
Abstract
A new III–V diluted magnetic semiconductor, (Ga, Mn)As, was prepared by low-temperature molecular beam epitaxy. The lattice constant of (Ga, Mn)As films determined by X-ray diffraction showed a linear increase with increase of Mn composition, suggesting homogeneous incorporation of Mn in the film. Magnetization measurements revealed ferromagnetic order at low temperature, while magnetotransport measurements showed the anomalous Hall effect and negative magnetore-sistance associated with the ferromagnetic order in the (Ga, Mn)As films.
Journal title
Applied Surface Science
Serial Year
1997
Journal title
Applied Surface Science
Record number
991572
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