Author/Authors :
Gilbert G. Walter and Xiaoping A. Shen، نويسنده , , F. Matsukura، نويسنده , , Y. Sugawara، نويسنده , , T. Kuroiwa، نويسنده , , H. Ohno، نويسنده , , A. Oiwa، نويسنده , , A. Endo، نويسنده , , S. Katsumoto، نويسنده , , Y. Iye، نويسنده ,
Abstract :
InMnAsAlGaSb diluted magnetic semiconductor heterostructures have been grown by molecular-beam epitaxy on GaAs substrates. Three epitaxial procedures were employed for the growth of InMnAs, which resulted in three-dimensional or two-dimensional nucleation. Low-temperature magnetotransport measurements reveal that while some of the samples show well-aligned ferromagnetic ordering some others show ferromagnetic behavior with no magnetic anisotropy or, in the extreme case, superparamagnetic behavior. The transport properties were correlated to the growth modes.
