STM observation of the atomic hydrogen adsorption on the Si(111)4 × 1-In surface

We have used scanning tunneling microscopy and low-energy electron diffraction to study early stages of atomic hydrogen interaction with Si(111)4 × 1-In surface at temperature 300°C. Indium rows of the 4 × 1-In structure were removed during interaction with atomic hydrogen and Si(111)4 × 1-H and Si(111)1 × 1-H coexisting regions were observed. This 4 × 1-H region was ascribed to the substrate reconstruction in accordance with the previous observations. Thus the substrate reconstruction for the Si(111)4 × 1-In was directly observed and evidenced. These results are interpreted on the basis of the recently proposed dimerized chain models for the Si(111)3 × 1 Ag and alkali metals reconstruction.