• Title of article

    Photoemission study of vanadium deposition on Si(100)2 × 1

  • Author/Authors

    T. Jikimoto، نويسنده , , M. Kisaka، نويسنده , , T. Shibasaki، نويسنده , , K. Yoshimoto، نويسنده , , M. Hirai، نويسنده , , M. Kusaka، نويسنده , , M. Iwami and M. Yanagihara، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    4
  • From page
    384
  • To page
    387
  • Abstract
    The process of VSi(100)2 × 1 interface formation has been examined using low energy electron diffraction (LEED) and photoemission spectroscopy (PES) with synchrotron radiation (SR). The results allow us to conclude that the deposited V atoms interact chemically with Si atoms from the beginning of V deposition on the Si substrate.
  • Journal title
    Applied Surface Science
  • Serial Year
    1997
  • Journal title
    Applied Surface Science
  • Record number

    991610

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=991610