Surface characterization using infrared reflection absorption spectroscopy on Si(100) processed by wet cleaning and gas treatment

Atomic bonds and surface morphology of Si(100) wafer processed by wet cleaning and gas treatment have been investigated by infrared reflection absorption spectroscopy (IR-RAS) and atomic force microscopy (AFM). SiH absorption peak has been observed on Si(100) surface processed by buffered HF and/or deionized-water treatment which is known to flatten the Si(111) surface. It is confirmed by AFM observation that the flat surface treated by deionized water has small etch pits which consist of Si(111) facets covered with monohydride (SiH) bonds. Moreover, Si(100) treated in F2 gas ambient has been characterized in situ. The desorption of hydrogen from SiH and SiH2 bonds dominates at the initial stage, and then the desorption from SiH3 bonds occurs.