Depth profiling of oxygen content of indium tin oxide fabricated by bias sputtering

Depth profiling of oxygen in indium tin oxide (ITO) films, fabricated by a hot cathode Penning discharge sputtering (HC-PDS) on glass substrates with negative substrate voltage in Ar atmosphere has been investigated using a high-energy ion beam. The substrate bias voltage was changed from −100 to 0 V. The oxygen content in the deposited film changed with substrate bias voltage. It was considered that Ar ion bombardment affected the change in oxygen composition. Correlation between oxygen content and the electrical and optical properties will be discussed.