The study of aging mechanism in ZnS:Mn thin-film electroluminescent devices grown by MOCVD

Evidence from DLTS and FTIR measurements strongly supports the assertion that the degradation mechanism of ZnS:Mn ACTFEL devices is mainly due to the deep electron trap, Et, which comes from the Mn activators reacting with surface water molecules. The photoluminescence measurements reveal that the Mn-related Et trap behaves like a nonradiative center. As a result, poor brightness characteristics including lower brightness and a higher threshold voltage were obtained when samples become aged.