Electrical characteristics of a triode with an n-SiMoAu double thin film/n-Si (n-Si/MoAu/n-Si) structure

A new type triode device has been fabricated. The triode has electrodes at the end of two n-Si on both sides of n-Si/MoAu/n-Si structure and the third electrode on MoAu double film. The n-Si/MoAu/n-Si structure was made by contact of Mo and Au films forming Schottky barriers of n-SiMo and Aun-Si. In the measurement results of electrical characteristics of this triode, the function of active device or transistor action was observed.