Morphological stability of AgAu multilayer on Si

The morphological stability of AgAu multilayers on Si has been studied by conventional and high-resolution transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy. In samples annealed at 300 and 400°C, multilayered AgAu films form a continuous textured layer on Si. In sampled at 500°C, pinholes were found to develop in the AgAu films. Island structures were formed in samples annealed at 600°C. The improved stability is attributed to the intermixing of Au and Ag so that the (AuAg)Si interface is more stable than that of either the AuSi or AgSi interface.